| 摘要 |
A method of kerf formation and treatment for solar cells and semiconductor films and a system therefor are described. A semiconductor film is backed by a first metal layer and topped by a second metal layer. A reference feature is defined on the film. An ultraviolet laser beam is aligned to the reference feature. A kerf is cut along the reference feature, using the ultraviolet laser beam. The beam cuts through the second metal layer, through the film and through the first metal layer. Cutting leaves debris deposited on walls of the kerf. The debris is cleaned off of the walls, using an acid-based solvent. In the case of solar cells, respective first terminals of the solar cells are electrically isolated by the cleaned kerf, and respective negative terminals of the solar cells are electrically isolated by the cleaned kerf. |
