| 摘要 |
A plasma processing apparatus for etching a backside of a wafer is provided to control a backside etching area of a wafer by changing a shape of an isolation ring according to the kind of processes. An upper electrode(30) generates the plasma by the radio frequency power. A gas distribution plate(32) uniformly supplies the reaction gas to a process chamber. A wafer(40) is fixed to a wafer chuck(34). An isolation ring(36) is arranged in the side of the wafer chuck in order to vary the backside etching area of the wafer. A lower electrode is arranged in the side of the isolation ring. A lower electrode forms an electric field by the interaction with the upper electrode to change the reactive gas to the plasma state. |
