| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of achieving a low frequency of having a defective post electrode, and to provide the semiconductor device.SOLUTION: The method for manufacturing a semiconductor device comprises the steps of: forming a first resist 104, including a plurality of first openings 104a, above a substrate 101; forming a plurality of first electrodes 105 corresponding to the first openings 104a by electrolytic plating; forming a second resist 106 including a second opening 106a that is on a first electrode 105a, out of the multiple first electrodes 105, whose upper surface is positioned at a height equal to or lower than a first predetermined value H1, on the first resist 104; and forming a second electrode 107 using the second resist 106 by electrolytic plating on the first electrode 105a whose upper surface is positioned at a height equal to or lower than the first predetermined value H1. |
