| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device that is able to restrict partial current concentration without using special tester in screening at high current density, and to provide an inspection method therefor.SOLUTION: A semiconductor device comprises: a semiconductor substrate (12) provided with a plurality of gate electrodes (26) arranged parallel to one another in a first direction and having a plurality of transistor cells (44) as cells (42) defined by adjacent gate electrodes; a gate wire (38) and a gate pad (36) that are formed on a first principal surface (12a) of a semiconductor substrate; a first pad (32) formed on the first principal surface and common to the plurality of transistor cells; and a second pad (40) formed on the first principal surface or a second principal surface (12b) and common to the transistor cells. A plurality of gate pads are provided, and gate electrodes are electrically separated into a plurality of types by the gate wires. Additionally, a plurality types of transistor cell are provided by combinations of defined gate electrodes.</p> |
