发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device.SOLUTION: The method of manufacturing a semiconductor device comprises the steps of: preparing a wafer WF1 and a wafer WF2; polishing a first metal film of the wafer WF1 by performing a first polishing process for the wafer WF1; polishing a first metal film of the wafer WF2 by performing the first polishing process for the wafer WF2 while performing another process for the wafer WF1; and performing the another process for the wafer WF2 after finishing the another process for the wafer WF1. The step of performing the first polishing process for the wafer WF2 includes the steps of: polishing the first metal film of the wafer WF2 at a first polishing speed; and polishing the first metal film of the wafer WF2 at a second polishing speed faster than the first polishing speed.
申请公布号 JP2014093386(A) 申请公布日期 2014.05.19
申请号 JP20120242405 申请日期 2012.11.02
申请人 RENESAS ELECTRONICS CORP 发明人 KAKITA SHINICHIRO
分类号 H01L21/304 主分类号 H01L21/304
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