| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a photovoltaic device capable of preventing current leakage at a substrate end surface, and of suppressing a collection loss of photocarriers generated in a periphery region of a substrate end part.SOLUTION: On a first main surface of an n-type single crystal silicon substrate 1, first amorphous semiconductor thin-film layers 3 and 4 of a reverse conductivity type to the n-type single crystal silicon substrate 1, and a first transparent electrode layer 5 are provided. On a second main surface, second amorphous semiconductor thin-film layers 7 and 8 of the same conductivity type as the n-type single crystal silicon substrate 1, and a second transparent electrode layer 9 are provided. The first transparent electrode layer 5 is formed so as to be separated from end parts of the first amorphous semiconductor thin-film layers 3 and 4, and the second transparent electrode layer 9 is formed so as to be separated from end parts of the second amorphous semiconductor thin-film layers 7 and 8. A high concentration impurity doping layer 2 that is a region including a non-formation region of the first transparent electrode layer 5 on the first main surface and that is the same conductivity type as the n-type single crystal silicon substrate 1 is formed.</p> |
