发明名称 |
PROCEDE DE CORRECTION DES EFFETS DE PROXIMITE ELECTRONIQUE UTILISANT DES FONCTIONS DE DIFFUSION DECENTREES |
摘要 |
The method involves correcting effects of forward and backward scattering of an electronic beam (100) by calculating a point spread function i.e. linear combination of Gaussian and gamma functions, where the point spread function comprises a function i.e. gamma distribution function, whose one maximum value is not located on a center part of the electronic beam and another maximum value is located on a backward scattering peak of the electronic beam, and another function with a maximum value located on the center part of the electronic beam to model forward scattering. Independent claims are also included for the following: (1) a non-ephemeral computer-readable medium comprising a set of instructions to simulate or correct effects of forward and backward scattering of an electron beam (2) an electronic lithography system (3) a system for simulating electronic lithography (4) an electronic microscopy system. |
申请公布号 |
FR2979165(B1) |
申请公布日期 |
2014.05.16 |
申请号 |
FR20110057338 |
申请日期 |
2011.08.16 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;ASELTA NANOGRAPHICS |
发明人 |
SCHIAVONE PATRICK;FIGUEIRO THIAGO |
分类号 |
H01J37/302 |
主分类号 |
H01J37/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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