发明名称 PROCEDE DE CORRECTION DES EFFETS DE PROXIMITE ELECTRONIQUE UTILISANT DES FONCTIONS DE DIFFUSION DECENTREES
摘要 The method involves correcting effects of forward and backward scattering of an electronic beam (100) by calculating a point spread function i.e. linear combination of Gaussian and gamma functions, where the point spread function comprises a function i.e. gamma distribution function, whose one maximum value is not located on a center part of the electronic beam and another maximum value is located on a backward scattering peak of the electronic beam, and another function with a maximum value located on the center part of the electronic beam to model forward scattering. Independent claims are also included for the following: (1) a non-ephemeral computer-readable medium comprising a set of instructions to simulate or correct effects of forward and backward scattering of an electron beam (2) an electronic lithography system (3) a system for simulating electronic lithography (4) an electronic microscopy system.
申请公布号 FR2979165(B1) 申请公布日期 2014.05.16
申请号 FR20110057338 申请日期 2011.08.16
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;ASELTA NANOGRAPHICS 发明人 SCHIAVONE PATRICK;FIGUEIRO THIAGO
分类号 H01J37/302 主分类号 H01J37/302
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