MEMORY DEVICE AND METHOD FOR TESTING THE SAME

摘要

A test method of a memory device comprises the steps of entering into a test mode to equally operate two or more banks; of activating a row corresponding to a row address in two or more banks; of latching the row address and a bank address corresponding to the banks; of writing the same data in a column selected by a column address in the activated row of the banks; of reading data written in the writing step from the banks; of confirming the data read from the banks in the read step; and of programming data in a nonvolatile memory by matching the row address with the bank address latched in the latch step when the data read from the banks is different from each other.