| 摘要 |
The present disclosure provides a heterostructure bipolar phototransistor (1) configured for providing an output signal in response to an external impinging light beam. The heterostructure bipolar phototransistor comprises an emitter region (16) and a collector region (13) being doped so that they are of the same conductivity type; a base region (15) interposed between the emitter region (16) and the collector region (13), the base region (15) being doped so that it is of the opposite conductivity type than the emitter region and the collector region; and an absorption region (14) interposed between the base region (15) and the collector region (13), wherein the absorption region comprises (or is formed of) a InGaAs/GaAsSb type-ll superlattice. The superlattice enables a lattice matched structure for a phototransistor which is sensitive to extended short wavelength infrared radiation. |
