发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
<p>PROBLEM TO BE SOLVED: To relax a stress applied to a connection member.SOLUTION: A semiconductor device comprises: a semiconductor element 11; and a connection member 30 which includes a plating layer for electrically and mechanically connecting the semiconductor element and a substrate 21 and connecting a plurality of metal particles and the above-described plurality of metal particles, and which includes a porous structure where metals 32 are mixed with cavities 34. A semiconductor device manufacturing method comprises: forming a mask layer on a semiconductor element 11; arranging a plurality of metal particles 32a in an opening of the mask layer; electrically and mechanically connecting the semiconductor element and a substrate 21 by connecting the plurality of metal particles 32a with each other by plating to form a connection member 30 including a porous structure where metals 32 are mixed with cavities 34.</p> |
申请公布号 |
JP2014090098(A) |
申请公布日期 |
2014.05.15 |
申请号 |
JP20120239534 |
申请日期 |
2012.10.30 |
申请人 |
FUJITSU SEMICONDUCTOR LTD |
发明人 |
NAKAMURA MASATOSHI;AKUTAGAWA YASUHITO;YODA HIROYUKI |
分类号 |
H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|