发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To relax a stress applied to a connection member.SOLUTION: A semiconductor device comprises: a semiconductor element 11; and a connection member 30 which includes a plating layer for electrically and mechanically connecting the semiconductor element and a substrate 21 and connecting a plurality of metal particles and the above-described plurality of metal particles, and which includes a porous structure where metals 32 are mixed with cavities 34. A semiconductor device manufacturing method comprises: forming a mask layer on a semiconductor element 11; arranging a plurality of metal particles 32a in an opening of the mask layer; electrically and mechanically connecting the semiconductor element and a substrate 21 by connecting the plurality of metal particles 32a with each other by plating to form a connection member 30 including a porous structure where metals 32 are mixed with cavities 34.</p>
申请公布号 JP2014090098(A) 申请公布日期 2014.05.15
申请号 JP20120239534 申请日期 2012.10.30
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 NAKAMURA MASATOSHI;AKUTAGAWA YASUHITO;YODA HIROYUKI
分类号 H01L21/60 主分类号 H01L21/60
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