| 摘要 |
Provided are a semiconductor device and a manufacturing method therefor. The method comprises: forming on a substrate (100) a first mask layer (106, 112), and forming one region (128) of a source region and a drain region by using the first mask layer (106, 112) as a mask; forming on the substrate (100) a second mask layer (120, 112), and forming the other region (128) of the source region and the drain region by using the second mask layer (120, 112) as a mask; removing a part (112) of the second mask layer (120, 112), the part (112) being close to the other region (128) of the source region and the drain region; forming a first gate dielectric layer (142) and a floating gate layer (144); forming on the side wall of the remaining part (120) of the second mask layer a mask layer (146) in the form of a side wall, patterning the floating gate layer (144) by using the mask layer (146) as a mask, and then removing the mask layer (146); and forming a second gate dielectric layer (130), and forming on the side wall of the remaining part (120) of the second mask layer a gate conductor (134) in the form of a side wall. |
