| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing method and apparatus capable of forming a protection film on a surface of an etching stop layer and suppressing closing of an opening of a hole, when etching an oxide layer.SOLUTION: A plasma processing method in which a plurality of holes different in depth are formed in a multilayer film having an oxide layer 105, a plurality of etching stop layers 100 composed of tungsten, and a mask layer, includes supplying a processing gas to a processing container to generate plasma, and etching a portion from a top face of the oxide layer to the plurality of etching stop layers to form the plurality of holes different in depth in the oxide layer at the same time (etching step). The processing gas contains a fluorocarbon-based gas, a rare gas, oxygen and nitrogen. |
