| 摘要 |
A method for forming a porous low-k film having an Si—O structure includes irradiating infrared light upon a film including a material having an Si—O structure, and irradiating ultraviolet light upon the film including the material having the Si—O structure such that a porous low-k film including the material having the Si—O structure is formed. The irradiating of the infrared light has an irradiation period of infrared light which is set shorter than an irradiation period of ultraviolet light in the irradiating of the ultraviolet light. |
