| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device that allows preventing the warpage of a substrate.SOLUTION: There is provided a semiconductor device 100 including a substrate 8 and a plurality of nonvolatile semiconductor memories 10 mounted on the substrate 8. The substrate 8 has: a first wiring layer provided on its first surface side and in which a first wiring pattern for mounting the nonvolatile semiconductor memories 10 is formed; a second wiring layer provided on a second surface side and in which a second wiring pattern is formed; a plurality of wiring layers formed as internal layers; and insulating layers provided among the first wiring layer, the second wiring layer, and the wiring layers. The difference between the wiring density in the whole wiring layers formed closer to the first surface side than to the center line of the layer structure of the substrate and the wiring density of the whole wiring layers formed closer to the second surface side than to the center line of the layer structure of the substrate is less than or equal to 7.5%. At least one wiring layer is a shield layer for preventing leakage of noise.</p> |
