发明名称 |
DIELECTRIC CAP LAYER FOR REPLACEMENT GATE WITH SELF-ALIGNED CONTACT |
摘要 |
Embodiments of the present invention provide a method of forming borderless contact for transistors. The method includes forming a sacrificial gate structure embedded in a first dielectric layer, the sacrificial gate structure including a sacrificial gate and a second dielectric layer surrounding a top and sidewalls of the sacrificial gate; removing a portion of the second dielectric layer that is above a top level of the sacrificial gate to create a first opening surrounded directly by the first dielectric layer; removing the sacrificial gate exposed by the removing of the portion of the second dielectric layer to create a second opening surrounded by a remaining portion of the second dielectric layer; filling the second opening with one or more conductive materials to form a gate of a transistor; and filling the first opening with a layer of dielectric material to form a dielectric cap of the gate of the transistor. |
申请公布号 |
US2014134836(A1) |
申请公布日期 |
2014.05.15 |
申请号 |
US201213672864 |
申请日期 |
2012.11.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;GLOBALFOUNDRIES, INC. |
发明人 |
PRANATHARTHIHARAN BALASUBRAMANIAN;SURISETTY CHARAN VEERA VENKATA SATYA;WANG JUNLI;PARK CHANG SEO;XIE RUILONG |
分类号 |
H01L21/283 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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