METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing device capable of obtaining a boron nitride film having high etching resistance and a low dielectric constant or to provide a method for manufacturing a semiconductor device capable of forming a boron nitride film having high etching resistance and a low dielectric constant.SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: carrying a substrate into a processing chamber; forming a boron film on the substrate by supplying at least a boron-containing gas into the processing chamber; and nitriding the boron film formed by the boron film forming step by supplying at least a nitrogen-containing gas into the processing chamber. This method forms a boron nitride film having a prescribed film thickness by repeating a series of processing steps composed of the boron film forming step and the nitriding step twice or more.