PATTERN FORMING METHOD AND PHOTOMASK

摘要

PROBLEM TO BE SOLVED: To provide a pattern forming method capable obtaining a desired micro phase separation pattern irrespective of density of a guide pattern.SOLUTION: A guide resist film 12 exposed to a pattern is developed to form a guide pattern 12a. Subsequently, a film of a di-block copolymer 15 is formed over a semiconductor substrate 10 having the guide pattern 12a formed thereon. In a step to form the guide pattern 12a, plural sparse main guide pattern openings 13a and dense main guide pattern openings 13b penetrating the guide resist film 12, and auxiliary guide pattern openings 14 which do not penetrate the guide resist film 12 are formed. In a peripheral area of the plural openings 13a and 13b, openings 13a and 13b or auxiliary openings 14 are disposed neighboring each other at a predetermined distance.