THE STRUCTURE OF SAPPHIRE GROWER

摘要

The present invention relates to a device for growing a single crystal of sapphire and, more particularly, to a device for growing a single crystal of sapphire, wherein an axis for growing and lifting an ingot is produced as a hollow axis and cooling water can circulate so that a high-priced axis can be replaced by a low-priced axis. In the device by means of the present invention, aluminum oxide is dissolved in a crucible and a seed is installed on an axis. Then, a part of the seed is dipped in the dissolved aluminum oxide in order to be cooled slowly, lifted, and rotated so that the seed is grown to a single crystal ingot. The axis comprises a chuck that fixes the top end of the seed; a hollow axis that is connected with the top end of the chuck and in which cooling water flows; and a pump that circulates the cooling water into the hollow axis.