发明名称 |
Light emitting diode (LED) die having peripheral electrode frame and method of fabrication |
摘要 |
A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer and a second-type semiconductor layer. The light emitting diode (LED) die also includes a peripheral electrode on the first-type semiconductor layer located proximate to an outer periphery of the first-type semiconductor layer configured to spread current across the first-type semiconductor layer. A method for fabricating the light emitting diode (LED) die includes the step of forming an electrode on the outer periphery of the first-type semiconductor layer at least partially enclosing and spaced from the multiple quantum well (MQW) layer configured to spread current across the first-type semiconductor layer. |
申请公布号 |
US8723160(B2) |
申请公布日期 |
2014.05.13 |
申请号 |
US201213644381 |
申请日期 |
2012.10.04 |
申请人 |
SEMILEDS OPTOELECTRONICS CO., LTD. |
发明人 |
CHU CHEN-FU;FAN FENG-HSU;CHENG HAO-CHUN;DOAN TRUNG TRI |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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