发明名称 Method for manufacturing semiconductor device
摘要 A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting property with the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer interposed therebetween; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property.
申请公布号 KR101393448(B1) 申请公布日期 2014.05.13
申请号 KR20070021066 申请日期 2007.03.02
申请人 发明人
分类号 H01L51/40 主分类号 H01L51/40
代理机构 代理人
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