发明名称 Photovoltaic device with a discontinuous interdigitated heterojunction structure
摘要 A photovoltaic device which includes: a) a substrate based on a crystalline semi-conductor material; b) a first electrode which includes at least one heterojunction made on one face, referred to as the rear face, of the substrate, where this heterojunction includes a layer based on a doped amorphous semi-conductor material; and c) a second electrode. The first and second electrodes are arranged on the rear face of the substrate according to an interdigitated combs design, and where the layer includes multiple portions of the doped amorphous semi-conductor material which are unconnected and spaced apart from each other.
申请公布号 US8723023(B2) 申请公布日期 2014.05.13
申请号 US20080532089 申请日期 2008.03.26
申请人 BETTINELLI ARMAND;DESRUES THIBAUT;COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 BETTINELLI ARMAND;DESRUES THIBAUT
分类号 H01L31/00;H01L31/0747 主分类号 H01L31/00
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