Semiconductor package and methods of fabricating the same

摘要

Provided is a semiconductor package having a power device and methods of fabricating the same. The semiconductor package includes a lead frame, a polymer layer component on the lead frame, a metal layer component on the polymer layer component, and a semiconductor chip on the metal layer component. The polymer layer component may include a material formed by adding alumina Al2O3, an aluminum nitride (AlN), or a boron nitride BN to an epoxy resin. The polymer layer component may have high thermal conductivity and good electric insulating characteristics.