发明名称 |
Silicon carbide rectifier |
摘要 |
Silicon carbide PiN diodes are presented with reduced temperature coefficient crossover points by limited p type contact area to limit hole injection in the n type drift layer in order to provide a lower current at which the diode shifts from negative temperature coefficient to a positive temperature coefficient of forward voltage for mitigating thermal runaway. |
申请公布号 |
US8723218(B2) |
申请公布日期 |
2014.05.13 |
申请号 |
US201213605024 |
申请日期 |
2012.09.06 |
申请人 |
HOBART KARL D.;KUB FRANCIS J.;ANCONA MARIO;IMHOFF EUGENE A.;THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
HOBART KARL D.;KUB FRANCIS J.;ANCONA MARIO;IMHOFF EUGENE A. |
分类号 |
H01L29/74 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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