发明名称 |
Method of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive coupling and device thus obtained |
摘要 |
A method of making a non-volatile MOS semiconductor memory device includes a formation phase, in a semiconductor material substrate, of isolation regions filled by field oxide and of memory cells separated each other by said isolation regions The memory cells include an electrically active region surmounted by a gate electrode electrically isolated from the semiconductor material substrate by a first dielectric layer; the gate electrode includes a floating gate defined. simultaneously to the active electrically region. A formation phase of said floating gate exhibiting a substantially saddle shape including a concavity is proposed. |
申请公布号 |
US8722490(B2) |
申请公布日期 |
2014.05.13 |
申请号 |
US201113219491 |
申请日期 |
2011.08.26 |
申请人 |
SERVALLI GIORGIO;BRAZZELLI DANIELA;MICRON TECHNOLOGY, INC. |
发明人 |
SERVALLI GIORGIO;BRAZZELLI DANIELA |
分类号 |
H01L21/336;H01L29/788 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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