| 摘要 |
PROBLEM TO BE SOLVED: To efficiently transfer heat from a device in a semiconductor device including the device surrounded by a resin material to inhibit metal diffusion into a crystal.SOLUTION: A semiconductor device manufacturing method comprises: arranging a metal layer on a rear face of a first semiconductor device opposite to a principal surface via a barrier layer; curing the first semiconductor device and a second semiconductor device of a type different from the first semiconductor device by covering the first semiconductor device and the second semiconductor device with a resin layer from the rear face side of the first semiconductor device; thinning the resin layer to expose the metal layer of the first semiconductor device and a part of the second semiconductor device; forming bump electrodes on the metal layer of the first semiconductor device and at the exposed part of the second semiconductor device; and joining the bump electrodes to a circuit board. |
