| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a solid state imaging device that reduces damage to a photoelectric conversion part due to an etching of an interlayer insulation layer.SOLUTION: A method for manufacturing a back-illuminated solid state imaging device having a semiconductor substrate in which a photoelectric conversion part and a transistor are formed, contact plugs 121, 122 connected to the transistor, and a shielding part 123 that shields light of incident light penetrating the photoelectric conversion part, comprises: a step for forming an interlayer insulation layer 117 on a front surface of the semiconductor substrate; a step for forming a first opening for forming contact plugs 121, 122 by etching and removing a part of the interlayer insulation layer 117; and a step for forming a second opening for forming the shielding part 123 by etching and removing an other part of the interlayer insulation layer 117. The etching process is performed until the first opening penetrates the interlayer insulation layer 117, and the etching process is stopped before the second opening penetrates the interlayer insulation layer 117. |
