| 摘要 |
PROBLEM TO BE SOLVED: To improve electrical reliability and a yield of a semiconductor device using a SiC substrate.SOLUTION: A method for manufacturing a semiconductor device has an impurity removal step S5 for supplying unsaturated hydrocarbon and ozone to a SiC substrate 10 to clean the SiC substrate 10. 98 vol% of ethylene is supplied to a process chamber 2 at 200 sccm to fill ethylene gas in the process chamber 2. In this state, more than 80 vol% of ozone is supplied to the process chamber 2 at 70 sccm. A pressure in the process chamber 2 is set at 300 Pa, a temperature of the susceptor 5 is set at 25°C to process the SiC substrate 10 for 10 minutes (step S5c). After processing by ozone and ethylene is completed, the supply of ethylene to the process chamber 2 is stopped, the SiC substrate 10 is processed by only ozone for 1 minute (step S5d). After the impurity removal step S5, an oxide film formed on a surface of the SiC substrate 10 is removed by hydrofluoric acid. |
