| 摘要 |
The present invention provides at least one technique or system for forming a black level correction (BLC) structure. In some embodiments, the BLC structure comprises a first region, a second region on at least some of the first region and a third region on at least some of the second region. For example, the first region comprises silicon and the third region comprises protection dielectric material. In some embodiments, the second region comprises a first sub-region, a second sub-region on the first sub-region and a third sub-region on the second sub-region. For example, the first sub-region comprises metallic silicide, the second sub-region comprises metal and the third sub-region comprises metal oxide. In this way, the BLC structure for the surface of the BLC structure to be coplanar is provided, since at least the third region is, for example on the same plane. |
