NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT AND DRIVING METHOD THEREOF

摘要

Provided are a non-volatile memory device using a resistive element and an operation method thereof. The non-volatile memory device includes: a multi-bit resistive memory cell; a sensing mode; a clamping unit which is connected between the resistive memory cell and the sensing node, provides clamping bias to the resistive memory cell; and a compensator which provides a compensation current to the sensing node; a sense amplifier which connects to the sensing node and senses the level alteration of the sensing node; and an encoder which encodes the output values of the sense amplifier in response to a first clock signal. The clamping bias us altered based on the time, and the compensation current is even during a read operation period.