| 摘要 |
A plasma process apparatus includes a vacuum chamber; a substrate holder configured to hold a substrate; a gas supplying part configured to supply a plasma generating gas into the vacuum chamber; an antenna configured to be supplied with a high-frequency power and generate an electromagnetic field for generating plasma of the plasma generating gas; a Faraday shield disposed between the antenna and an area where the plasma is generated and composed of a conductive plate where a plurality of slits, which extend in a direction that intersects with an extending direction in which the antenna extends and are arranged in the extending direction of the antenna, are formed to block an electric field in the electromagnetic field and to allow a magnetic field in the electromagnetic field to pass therethrough; and an adjusting part composed of a conductive material and configured to adjust an opening area of the slits. |
