| 摘要 |
The present invention relates to CIGS solar cell fabrication. The invention discloses a method for fabricating CIGS thin film solar cells using a roll-to-roll apparatus. The invention discloses method to fabricate semiconductor thin film Cu(InGa)(SeS)2 by sequentially electroplating a stack of multiple precursor layers comprising of copper, indium, gallium, and selenium elements or their alloys followed by selenization at a temperature between 450° C. and 700° C. |
