| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film device manufacturing method which can obtain an intended channel length shorter than a width of a gate electrode film.SOLUTION: A thin film device manufacturing method comprises: stacking a gate electrode film 2, a gate insulation film 3 and an IGZO film 4 on a substrate 1 in this order; subsequently irradiating predetermined light from the substrate 1 side toward the IGZO film 4; making a region of the IGZO film 4, which does not overlap the gate electrode film 2 on the line of sight when viewed from the substrate 1 side have low resistance to fabricate a source region 6a and a drain region 6b; and fabricating a source electrode film 7a on the source region 6a and a drain electrode film 7b on the drain region 6b such that the source electrode film 7a or the drain electrode film 7b overlaps a part of the gate electrode film 2 on the line of sight when viewed from the substrate 1 side to achieve a channel length smaller than a width of the gate electrode film 2. |
