| 发明名称 |
METAL OXIDE FILM AND METHOD FOR FORMING METAL OXIDE FILM |
| 摘要 |
A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφand less than or equal to 10 nmφ. |
| 申请公布号 |
US2014124776(A1) |
申请公布日期 |
2014.05.08 |
| 申请号 |
US201314071932 |
申请日期 |
2013.11.05 |
| 申请人 |
SEMICONDUCTORS ENERGY LABORATORY CO., LTD. |
发明人 |
TAKAHASHI MASAHIRO;HIROHASHI TAKUYA;TSUBUKU MASASHI;ISHIHARA NORITAKA;OOTA MASASHI |
| 分类号 |
H01L29/04;G01N23/207;H01L21/66;H01L29/22;H01L29/24 |
主分类号 |
H01L29/04 |
| 代理机构 |
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