| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve throughput of a manufacturing process of a semiconductor device while appropriately forming an insulating film on an inner lateral face of a through hole which pierces a substrate in a thickness direction in the manufacturing process of the semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises: supplying an electrodeposition insulating film solution D in through holes 40-42 which pierce a wafer 10 in a thickness direction; subsequently applying a voltage by using the electrodeposition insulating film solution D in the through hole 40 for a ground as a cathode and the electrodeposition insulating film solution D in the through hole 41 for a power supply and the electrodeposition insulating film solution D in the through hole 42 for a signal as anodes; forming electrodeposition insulating films 50 on an inner surface of the through hole 41 for the power supply in a bulk layer 11 and on an inner surface of the through hole 42 for the signal in the bulk layer 11, respectively; and checking a formation state of the electrodeposition insulating film 50.</p> |
