| 摘要 |
A conductive interconnect (340, 440, 540, 640) includes a conductive support layer (330, 430, 530, 630), a conductive material (320, 520, 620) on the conductive support layer (330, 430, 530, 630) and an inorganic collar (350, 450, 550, 650) partially surrounding the conductive material (320, 520, 620). The inorganic collar (350, 450, 550, 650) is also disposed on sidewalls of the conductive support layer (330, 430, 530, 630). A method of fabricating the conductive interconnect (340, 440, 540, 640) comprises fabricating a conductive material (320, 520, 620) on a seed layer (304, 504), forming an organic collar (310, 510) to partially surround the conductive material (320, 520, 620), etching the conductive seed layer (304, 504) to form the conductive support layer (330, 430, 530, 630) and heating to transition the organic collar (310, 510) into the inorganic collar (350, 450, 550, 650) that partially surrounds the conductive material (320, 520, 620) and is disposed on sidewalls of the conductive support layer (330, 430, 530, 630). The organic collar (310, 510) may be formed by depositing a photosensitive spin on dielectric material on the conductive material (320, 520, 620) and patterning the photosensitive spin on dielectric material. The conductive material (620) may be a single conductive material (320) or may comprise a stack of a first conductive layer (322) and a second conductive layer (324), separated by a barrier layer, in which case the heating step also causes a reflow of the second conductive layer (324) of the conductive material stack. |
