| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is easily miniaturized and that can increase a current density.SOLUTION: An emitter electrode 3 and an emitter side gate electrode 6 are formed on an emitter side 2a of a substrate 2, and a collector electrode 4 and a collector side gate pad 13 are formed on a collector side 2b of the substrate 2. A surface of the emitter side gate electrode 6 is coated by a polyimide 8. The collector side gate pad 13 is connected to the emitter side gate electrode 6 by a penetration hole 9. A lateral face part of the penetration hole 9 is coated by an insulating film 10. |
