SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a trench structure that is capable of improving a dielectric strength voltage, and provide a method of manufacturing the semiconductor device.SOLUTION: The semiconductor device comprises: a first n-type semiconductor layer 11; a second n-type semiconductor layer 12; a p-type semiconductor layer 13; a trench 3 penetrating the p-type semiconductor layer 13 to the second n-type semiconductor layer 12; an insulator layer 5 formed in a bottom 3a and a side 3b of the trench 3 along the surface of the trench 3; a gate electrode insulated from the second n-type semiconductor layer 12 and the p-type semiconductor layer 13 by the insulation layer 5; and an n-type semiconductor region 14 formed on the p-type semiconductor layer 13 and around the trench 3. At least a part of the gate electrode is formed inside the trench 3. The manufacturing method comprises forming at least a part of the insulation layer 5 in the trench 3 by sputtering.