发明名称 Varactor Diode, Electrical Device and Method for Manufacturing Same
摘要 An electrical device includes a semiconductor material. The semiconductor material includes a first region of the semiconductor material having a first conductivity type, a second region of the semiconductor material having a second conductivity type complementary to the first conductivity type and an intermediate region of the semiconductor material between the first region and the second region. The first and second regions lie next to each other the intermediate region so as to form a diode structure. A shape of the intermediate region tapers from the first region to the second region.
申请公布号 US2014124893(A1) 申请公布日期 2014.05.08
申请号 US201213667996 申请日期 2012.11.02
申请人 INFINEON TECHNOLOGIES AG 发明人 DIETL JOSEF;PEICHL RAIMUND;BETTINESCHI GABRIELE
分类号 H01L29/93;H01L21/04;H01L27/06 主分类号 H01L29/93
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