发明名称 |
START-UP TECHNIQUE AND SYSTEM FOR A SELF-POWERED GATE DRIVE CIRCUIT |
摘要 |
A power transistor system (200) comprises; - a first power transistor (12a, 16a); - a first gate drive circuit (10a) comprising a first (C) and second (Cp) supply capacitor, the first gate drive circuit electrically coupled to the first power transistor; - a first switch (sw1), the first switch electrically coupling a single-supply voltage node (Vp) with the first supply capacitor (C) of the first gate drive circuit when closed; and - a control module configured to: signal the first switch (sw1) to close; signal the first gate drive circuit to switch on the first power transistor, the first gate drive circuit configured to apply a current supplied by a discharge of the first supply capacitor (C) of the first gate drive circuit to the gate (G) of the first power transistor; and signal the first gate drive circuit to switch off, wherein the first gate drive circuit is configured to re-charge the first supply capacitor of the first gate drive circuit by applying a current supplied by a discharge of the respective second supply capacitor (Cp) to the first capacitor (C). |
申请公布号 |
WO2014068354(A1) |
申请公布日期 |
2014.05.08 |
申请号 |
WO2012IB02655 |
申请日期 |
2012.10.31 |
申请人 |
FREESCALE SEMICONDUCTOR, INC.;SICARD, THIERRY;PERRUCHOUD, PHILIPPE |
发明人 |
SICARD, THIERRY;PERRUCHOUD, PHILIPPE |
分类号 |
H02M1/36;H02M1/08;H03K17/567 |
主分类号 |
H02M1/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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