| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer processing method capable of suppressing energy diffusion and laser beam reflection.SOLUTION: A wafer processing method comprises the steps of: forming a protective film P on a surface WS of a wafer W (protective film formation step); performing ablation processing for the wafer by irradiating the wafer with a laser beam from the protective film P side along a division schedule line after performing the protective film formation step (laser beam irradiation step); and sticking an adhesive tape for peeling to the whole surface of the protective film P and peeling the protective film P from the surface WS of the wafer W together with the adhesive tape after performing the laser beam irradiation step (peeling step). The protective film formation step applies a mixed resin J added with a photopolymerization initiator which absorbs a laser beam into a methacrylate monomer or an acrylate monomer to the surface WS of the wafer W, and forms the protective film P on the surface WS of the wafer W by hardening the mixed resin J by irradiating the resin with ultraviolet light V. |
