| 摘要 |
A drive device for an insulated gate semiconductor element comprises: a constant current circuit for activating an IGBT by supplying the gate of the IGBT with a constant current; a discharging circuit for deactivating the IGBT by grounding the gate of the IGBT; and a switching circuit for turning the IGBT on and off by activating either the constant current circuit or the discharging circuit in accordance with a control signal. Specifically, the drive device for insulation gate type semiconductor element comprises: a current detection circuit for detecting a current flowing in the IGBT when the IGBT is turned on; and a current adjustment circuit for controlling the output current from the constant current circuit in accordance with the turn-on characteristics of the IGBT by feeding back the current detected by the current detection circuit to the constant current circuit. |
