发明名称
摘要 PROBLEM TO BE SOLVED: To stop film deposition reaction in an extreme short period of time and suppress overshoot. SOLUTION: The film deposition device includes: a first chamber 3 where a substrate 10 is stored; a supply line for supplying a medium, in which a film deposition material is mixed in a supercritical state, onto the first chamber 3; a stage 9 for holding the substrate 10 in the first chamber 3; a second chamber 4 for decompressing the pressure inside the first chamber 3 to lower pressure than the critical pressure of the medium; a pipe 7a for connecting the first chamber 3 and the second chamber 4; and a valve 7b provided in the pipe 7a. COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP5486445(B2) 申请公布日期 2014.05.07
申请号 JP20100209243 申请日期 2010.09.17
申请人 发明人
分类号 C23C16/44;C23C16/42;H01L21/31 主分类号 C23C16/44
代理机构 代理人
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地址