发明名称 MEASURING METHOD, DATA PROCESSING APPARATUS AND ELECTRON MICROSCOPE USING SAME
摘要 <p>The objective of the invention is to provide a measuring method that can determine pattern contours and dimensions with high precision even if an object to be measured shrinks due to electron beam radiations. In order to achieve this objective, a method, which performs measurements by irradiating an electron beam onto a sample having a pattern formed on a primary coating thereof, prepares an SEM image and contour of the pattern (S201, S202), material parameters of the pattern part and primary coating part of the sample (S203, S204), and a beam condition in irradiating the electron beam onto the sample (S205), and uses these prepared things to calculate a pattern shape or dimensions before the irradiation of the electron beam (S206).</p>
申请公布号 KR20140053406(A) 申请公布日期 2014.05.07
申请号 KR20147008797 申请日期 2012.09.27
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 OHASHI TAKEYOSHI;TANAKA JUNICHI;SEKIGUCHI TOMOKO;KAWADA HIROKI
分类号 G01B15/00;G01B15/04;H01J37/26;H01L21/66 主分类号 G01B15/00
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