Two light emitting diodes stacked in an n-p-n arrangement and LED package comprising the same

摘要

Disclosed are a light emitting device (100) and a light emitting device package having the same. The light emitting device (100) includes a first semiconductor layer (130) doped with N type dopants, a first active layer (140) on the first semiconductor layer (130), a second semiconductor layer (150) doped with P type dopants on the first active layer (140), a second active layer (160) on the second semiconductor layer (150), and a third semiconductor layer (170) doped with N type dopants on the second active layer (160). A thickness of the second semiconductor layer (150) is in a range of 2000Å to 4000Å, and doping concentration of the P type dopants doped in the second semiconductor layer (150) is in a range of 1018cm-3 to 1021 cm-3.