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发明名称
Multi-Level Memory Device And Method Of Operating The Same
摘要
<p>본 발명은 다중 레벨 메모리 장치 및 그 동작 방법을 제공한다. 이 장치는 그 최대값보다 그 최소값 근방에서 더 높은 저항 레벨의 분포 밀도를 갖는 메모리 구조체를 포함한다.</p>
申请公布号
KR101390340(B1)
申请公布日期
2014.05.07
申请号
KR20070092219
申请日期
2007.09.11
申请人
发明人
分类号
G11C13/02
主分类号
G11C13/02
代理机构
代理人
主权项
地址
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