发明名称 Doped lead tellurides for thermoelectric applications
摘要 A p- or n-conductive semiconductor material comprises a compound of the general formula (I) Pb1−(x1+x2+ . . . +xn)A1x1A2x2 . . . AnxnTe1+z  (I) where: in each case independently n is the number of chemical elements different from Pb and Te 1 ppm≰x1 . . . xn≰0.05−0.05≰z≰0.05 and n≧2 A1 . . . An are different from one another and are selected from the group of the elements Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, As, Sb, Bi, S, Se, Br, I, Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or n=1 A1 is selected from Ti, Zr, Ag, Hf, Cu, Gr, Nb, Ta.
申请公布号 US8716589(B2) 申请公布日期 2014.05.06
申请号 US20070293170 申请日期 2007.01.29
申请人 HAASS FRANK;BASF AKTIENGESELLSCHAFT 发明人 HAASS FRANK
分类号 H01L35/16 主分类号 H01L35/16
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