| 摘要 |
Provided are a manufacturing method of a semiconductor device and a substrate processing apparatus. The manufacturing method of the semiconductor device includes: loading a plurality of substrates into a reaction vessel, which is configured by a process tube and a manifold that supports the process tube, and arranging the loaded substrates within the reaction vessel; pre-processing the plurality of substrates by supplying a pre-process gas from the manifold side toward the process tube side within the reaction vessel; main-processing the plurality of pre-processed substrates by supplying a main-process gas from the manifold side toward the process tube side within the reaction vessel; and unloading the plurality of main-processed substrates from the reaction vessel, wherein in pre-processing the plurality of substrates, the pre-process gas is supplied from at least one position in an area corresponding to the manifold, and at least one position in an upper area of an area corresponding to a substrate arrangement area. |
