| 摘要 |
Semiconductor structure and methods for manufacturing the same are disclosed. In one embodiment, the semiconductor device is formed on an SOI substrate comprising an SOI layer, a buried insulating layer, a buried semiconductor layer and a semiconductor substrate from top to bottom, and comprises: source/drain regions formed in the SOI layer; a gate formed on the SOI layer, wherein the source/drain regions are located at both sides of the gate; a back gate region formed by a portion of the buried semiconductor layer which is subjected to resistance reduction; and a first isolation structure and a second isolation structure which are located at both sides of the source/drain regions and extend into the SOI substrate; wherein the first isolation structure and the second isolation structure laterally adjoin the SOI layer at a first side surface and a second side surface respectively; the first isolation structure laterally adjoins the buried semiconductor layer at a third side surface; and the third side surface is located between the first side surface and the second side surface. |
