UTILISATION D'ISOLANTS DE MOTT CENTROSYMETRIQUES DANS UNE MEMOIRE DE STOCKAGE DE DONNEES A COMMUTATION RESISTIVE

摘要

A material belonging to the family of centrosymmetric Mott insulators is used as an active material in a resistively switched memory for storing data. The material is placed between two electrical electrodes, by virtue of which an electric field of a preset value is applied in order to form, by way of an electron avalanche effect, an elementary information cell that has at least two logic states.