发明名称 Interconnection Structure
摘要 A structure comprises a first passivation layer formed over a substrate, a second passivation layer formed over the first passivation layer, wherein the second passivation layer includes a first opening with a first dimension, a bond pad embedded in the first passivation layer and the second passivation layer, a protection layer formed on the second passivation layer comprising a second opening with a second dimension, wherein the second dimension is greater than the first dimension and a connector formed on the bond pad.
申请公布号 US2014117534(A1) 申请公布日期 2014.05.01
申请号 US201213664176 申请日期 2012.10.30
申请人 LTD. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY.;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIU HAO-JUIN;CHUANG YAO-CHUN;CHUANG CHITA;TSENG YU-JEN;CHEN CHEN-SHIEN
分类号 H01L23/485;H01L21/768;H01L23/482 主分类号 H01L23/485
代理机构 代理人
主权项
地址