发明名称 |
Interconnection Structure |
摘要 |
A structure comprises a first passivation layer formed over a substrate, a second passivation layer formed over the first passivation layer, wherein the second passivation layer includes a first opening with a first dimension, a bond pad embedded in the first passivation layer and the second passivation layer, a protection layer formed on the second passivation layer comprising a second opening with a second dimension, wherein the second dimension is greater than the first dimension and a connector formed on the bond pad. |
申请公布号 |
US2014117534(A1) |
申请公布日期 |
2014.05.01 |
申请号 |
US201213664176 |
申请日期 |
2012.10.30 |
申请人 |
LTD. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY.;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIU HAO-JUIN;CHUANG YAO-CHUN;CHUANG CHITA;TSENG YU-JEN;CHEN CHEN-SHIEN |
分类号 |
H01L23/485;H01L21/768;H01L23/482 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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